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B772 TO-126 Power Transistor

  • 30000 Pack/Packs pcs
  • GSME
  • ShenZhen
  • 50/units
  • B772
  • Tag:B772 To-126 Power Transistor,High Quality Power Transistor,Rf Power Transistor,Guilin Strong Micro-Electronics Co
Post Date : November 18
Product Details
Company Profile

Item specifics

GSME
ShenZhen
50/units
B772
Guangxi China (Mainland)
T/T
30000 Pack/Packs pcs
30days
Throught Hole
100000000 Pack/Packs per Month pcs
silicon transistor

Specifications

B772 :PNP Si transistor suited for the output stage of 3W audio amplifier, voltage regulator, DC-DC converter and relay driver.

B772 Silicon Transistor

MAXIMUM RATINGS(Ta=25)

CHARACTERISTIC

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

-40

V

Collect-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current DC

Ic

-3.0

A

Collector Current pulse

Ic

-7.0

A

Collector Power Dissipation

PC

3

W

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55~150

ELECTRICAL CHARACTERISTICS

(TA=25 unless otherwise noted)

Characterstic

Symbol

Test Condition

Min

TYP

Max

Unit

Collector Cutoff Current

ICBO

VCB=-30V,IE=0

-1.0

μA

Emitter Cutoff Current

IEBO

VEB=-5V,IC=0

-1.0

μA

Collector-Base Breakdown Voltage

V(BR)CBO

IC=-100μA

-40

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-10mA

-30

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=-100μA

-5

V

DC Current Gain

HFE(1)

VCE=-2V,IC=-20A

30

HFE(2)

VCE=-2V,IC=-1A

60

400

Collector Saturation Voltage

VCE(sat)

IC=-2A, IB=-200mA

-0.5

V

Base Saturation Voltage

VBE(sat)

IC=-2A, IB=-200mA

-2.0

V

Transition Frequency

fT

VCE=-5V,IC=-100mA

80

MHz

Collector Output Capacitance

Cob

VCB=-10V,IE=0,f=1MHz

55

pF

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MMBT2907A Switching Transistor (SOT-23)

MMBT2907A Switching Transistor (SOT-23)

MMBT2907A Switching Transistor (SOT-23)

Designed for general-purpose switching and amplifier applications,where high-density packaging is required.High-pressure switch

MAXIMUM RATINGS

Characteristic

Symbol

GM2907

GM2907A

Unit

Collector-Emitter Voltage

VCEO

-40

-60

Vdc

Collector-Base Voltage

VCBO

-60

-60

Vdc

Emitter-Base Voltage

VEBO

-5.0

-5.0

Vdc

Collector Current-Continuous

Ic

-600

-600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

FR-5 Board(1)

TA=25

Derate above25

PD

225

1.8

mW

mW/

Total Device Dissipation

Alumina Substrate(2)TA=25

Derate above25

PD

300

2.4

mW

mW/

Thermal Resistance Junction to Ambient

RΘJA

417

W

Junction and Storage Temperature

TJ,Tstg

-55to+150

Detail more >>
2SA812 Transistor with SOT-23 Package

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Complementary to 2SC1623
High DC Current Gain
High Voltage

MAXIMUM RATINGS

Characteristic

Symbol

Rating

Unit

Collector-Emitter Voltage

VCEO

-50

Vdc

Collector-Base Voltage

VCBO

-60

Vdc

Emitter-Base Voltage

VEBO

-5.0

Vdc

Collector Current—Continuous

Ic

-100

mAdc

OFF CHARACTERISTICS

Emitter Cutoff Current

(VEB=-5.0v,IC=0)

IEBO

-0.1

μA

Collector Cutoff Current

(VCB=-60v,IE=0)

ICBO

-0.1

μA

Collector Saturation Voltage

(Ic=-100mAdc,IB=-10mA)

VCE(sat)

-0.18

-0.3

Vdc

Base to Emitter Voltage

(VCE=-6.0v,IC=-1.0mA)

VBE

-0.58

-0.62

-0.68

Vdc

DC Current Gain

(VCE=-6.0v,IC=-1.0mA)

HFE

90

200

600

Gain Bandwidth Product

(VCE=-6.0v,IC=-1.0mA)

fT

-180

MHz

Output Capacitance

(VCB=-10v,IE=0,f=1.0MHz)

Cob

4.5

pF

Detail more >>
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